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| JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors KTC2316 FEATURES Power dissipation PCM: 0.9 W (Tamb=25) TO-92L TRANSISTOR (NPN) 1. EMITTER 2. COLLECTOR 3. BASE Collector current 0.8 A ICM: Collector-base voltage 120 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Transition frequency Collector output capacitance VCE(sat) VCE=5V, IC=100mA IC=500mA, IB=50mA VCE=5V, IC=100mA VCB=10V, IE=0, f=1MHz 123 unless otherwise specified) Test conditions MIN TYP MAX UNIT V V V Ic=1mA, IE=0 Ic=10mA, IB=0 IE=1mA, IC=0 VCB=120V, IE=0 VEB=4V, IC=0 VCE=5V, IC=10mA 120 120 5 0.1 0.1 60 80 240 1 120 30 A A V MHz pF fT Cob CLASSIFICATION OF hFE(1) Rank Range Marking O 80-160 Y 120-240 |
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